CVD of Compound Semiconductors: Precursor Synthesis, by Prof. Anthony C. Jones, Prof. Paul O'Brien(auth.)

By Prof. Anthony C. Jones, Prof. Paul O'Brien(auth.)

Chemical progress equipment of digital fabrics are the keystone of microelectronic equipment processing. This e-book discusses the purposes of metalorganic chemistry for the vapor part deposition of compound semiconductors. Vapor section tools used for semiconductor deposition and the fabrics houses that make the organometallic precursors invaluable within the electronics are mentioned for a number of materials.

subject matters included:

* options for compound semiconductor growth
* metalorganic precursors for III-V MOVPE
* metalorganic precursors for II-VI MOVPE
* single-source precursors
* chemical beam epitaxy
* atomic layer epitaxy

numerous precious appendixes and a severely chosen, updated checklist of references around off this sensible guide for fabrics scientists, solid-state and organometallic chemists, and engineers.

Chapter 1 simple ideas (pages 1–42):
Chapter 2 Precursor Chemistry (pages 43–98):
Chapter three MOVPE of III–V Compounds (pages 99–186):
Chapter four MOVPE of II–VI Compounds (pages 187–228):
Chapter five Metalorganic Precursors for Chemical Beam Epitaxy (pages 229–272):
Chapter 6 Atomic Layer Epitaxy (pages 273–286):
Chapter 7 the only resource method of the Deposition of Compound Semiconducting fabrics by way of MOCVD and similar equipment (pages 288–312):

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Which is a continuation-in-part of Ser. No. 213. Fcb. 13. 1968. abandoned. ~ ...................... QOB 25/02; C30B 25/10; C30B 25/18; HOlL 21/205 US. CI. 156/606; 156/610; [51] In:. 5; 357/4; [58] Field of Search ........... S. 955 1/1969 William .............................. Ruehnvcir .......................... Gdli .................................... Scitcr .................................. 552 7/1972 3,830,654 8/1974 Jan. 11, 1983 [451 Zorowick ........................... Marinace .............................

1731 G. J. Davies, D. A. Andrews, Chemtronics 1988, 3, 3. 1741 Y. Shiraki, M. Konagai, S. Hiyamizu, J. Crystal Growth 1994, 1-4, and references therein. 1751 P. D. Dapkus, D. Y. Maa, Q. Chen, W. G. Jeorg, S. P. Den Baars, J. Crystal Growth 1991, 107, 73. 1761 P. O’Brien, in: Inorganic Materials, Chap. : D. W. Bruce, D. O’Hare), Wiley, New York, 1992, p. 500. 1771 R. H. Reep, S. K. Ghandi, J. Crystal Growth 1983, 61, 499. [78] M. R. Leys, Chemtronics 1987, 2, 155. 1791 K. F. Jensen, D. 1. Fotiadis, T.

Vertical reactor 1 2o 28 1 Basic Concepts GaAs substrates was soon demonstrated [52]. Other workers also confirmed the versatility of the MOCVD technique by growing GaP films from mixtures of Me,Ga and trimethylphosphine (Me,P) [53]. Subsequently it was shown that a wide range of 111-V compounds could be grown by MOCVD including AlGaAs [54,55], GaAsP, GaAsSb [56], GaN, AlN [57], InP, InAs, InGaAs and InAsP [58,59]. Although by 1973, a large number of 111-V compound semiconductors had been deposited by MOCVD, the purity of the grown layer was insufficient for device applications.

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